BOLTZMANN EQUATION PAPERS:

<>C. Heitzinger, C. Ringhofer. S. Ahmed, D. Vasileska:
3D Monte Carlo Device Simulations Using an Effective Quantum Potential Including Electron – Electron Interactions
J. Comp. Electronics  6(1-3):15-18, 2007 <> 

C. Jungemann, A. Pham, B. Meinerzhagen,  C. Ringhofer, M. Boellhofer:
"Stable discretization of the Boltzmann equation based on spherical harmonics, box integration and a maximum entropy dissipation principle"
Journal Appl. Physics, 100: 024502 (1-13) , 2006.

C. Heitzinger, C. Ringhofer, "An Effective Quantum Potential for  Particle-Particle Interactions in Three-dimensional Semiconductor
  Device Simulations",  J. Comp. Electronics  6(4):xx, 2007..

S. Ahmed, C. Heitzinger, D. Vasileska, C. Ringhofer: A quantum potential approach to modeling nanoscale MOSFETS

Journal of Computational Electronics 4(2): 57-61, 2005.

Hasanur R. Khan, Dragica Vasileska, S. S. Ahmed, C. Ringhofer and Clemens Heitzinger,
"Modeling of FinFET: 3D MC Simulation Using FMM and Unintentional Doping Effects on Device Operation"
Journal of Computational Electronics,  3: 337 - 340, 2004.

<>C. Heitzinger,S. Ahmed, C. Ringhofer, D. Vasileska: Efficient simulation of the full Coulomb interaction in three dimensions.
to appear J. Comp. Electronics (2005).

S. Ahmed, C. Ringhofer, D. Vasileska: 'Parameter-Free Effective
Potential Method for Use in Particle-Based Device Simulations' Nanotechnology, IEEE Transactions on

Volume 4, Issue 4, July 2005 Page(s):465 - 471

<>
C. Heitzinger S. Ahmed, C. Ringhofer, D. Vasileska ::
"On the efficient simulation of electron-electron interaction in nanoscale MOSFETS"
submitted, NANOTECHNOLOGY (2004) (PDF).

S. Ahmed, C. Ringhofer, D. Vasileska :
"Modeling Mosfets using effective potentials", Superlattices and Microstructures 34: 311-317, 2003.

C. Heitzinger S. Ahmed, C. Ringhofer, D. Vasileska :
"Accurate three dimensional simulation of electron mobility including electron - electron and electron - dopant
interactions" submitted, J. Electrochemical Soc. (2004) (PDF)

S. Ahmed, C. Ringhofer, D. Vasileska :
"An Effective Potential  Approach to Modelling 25nm MOSFET Devices"
Journal of Computational Electronics 2:113-117 (2003) (PDF).

C. Ringhofer, C.Schmeiser, A. Zwirchmayer: "Moment methods for the semiconductor Boltzmann
equation in bounded position domains" , SIAM J. Num. Anal. 39 pp. 1078 - 1095(2001)

C. Ringhofer: "Space - Time Discretization of Series Expansion Methods for the Boltzmann
Transport Equation", SIAM J. Numerical Analysis 38, pp. 442-465  (2000).

C. Ringhofer: " A Mixed Spectral - Difference Method for the Steady State Boltzmann - Poisson System"
SIAM J. Numerical Analysis 41, pp. 64-89 (2003) (g-zipped PS).

C. Ringhofer:  "Numerical Methods for the Semiconductor Boltzmann Equation based on Spherical Harmonics
Expansions and Entropy Discretizations" Transport Theory and Stat. Phys. 31, pp.:431-452 (2002). (PDF)

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